Heat and Noise in Graphene: From Unique Physics to Practical Applications
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Location:
258 Fitzpatrick HallHost:
Huili (Grace) Xing
Phone: 574-631-9108
Website: http://www.nd.edu/~hxing
Office: 262 Fitpatrick Hall
Unique electronic properties of two-dimensional (2D) graphene originate from its unusual linear Dirac-cone dispersion. Phonons – quanta of lattice vibrations – in 2D crystals also reveal features different from those in bulk materials. In 2008, we discovered that the phonon thermal conductivity of suspended graphene can be exceptionally high – above ~2000 W/mK at room temperature – exceeding that of the basal graphite planes [1]. We explained it by quenching of the Umklapp processes in 2D systems and resulting anomalously long mean free path (MFP) of the low-frequency acoustic phonons in graphene [2-4]. In the first part of my talk, I will briefly review the results of our optothermal Raman measurements, and describe practical applications of graphene in thermal management of electronics, e.g. graphene heat spreaders for SOI and GaN technologies [5] and graphene fillers in the next generation of the thermal interface materials (TIMs) for CMOS [6]. In the second part of my talk, I will discuss graphene electronic applications that do not require the energy band-gap including graphene-on-diamond interconnects with exceptional current-carrying capacity [7], low-noise graphene thickness-graded transistors for analog electronics and communications [8], phase detectors [9] and selective gas sensors implemented with pristine graphene [10]. [1] A.A. Balandin, et al., Nano Lett., 8, 902 (2008); [2] D.L. Nika, et al., Phys. Rev. B, 79, 155413 (2009); [3] S. Ghosh, et al., Nature Mat., 9, 555 (2010); [4] A.A. Balandin, Nature Mat., 10, 569 (2011); [5] Z. Yan, et al., Nature Comm., 3, 827 (2012); [6] K.F. Shahil and A.A. Balandin, Nano Lett., 12, 861 (2012); [7] J. Yu, et al., Nano Lett., 12, 1603 (2012); [8] G. Liu, et al., Appl. Phys. Lett., 100, 033103 (2012); [9] X. Yang, et al., Electron Device Lett., 32, 1328 (2011); [10] S. Rumyantsev, et al., Nano Lett., 12, 2294 (2012).
Seminar Speaker:
Alexander A. Balandin
University of California – Riverside
Alexander A. Balandin received his BS (1989) and MS (1991) degrees Summa Cum Laude in Applied Physics and Mathematics from the Moscow Institute of Physics & Technology (MIPT), Russia. He received his MS (1995) and PhD (1997) degrees in Electrical Engineering from the University of Notre Dame, USA. From 1997 till 1999, he worked as a Research Engineer at UCLA. In 1999 he joined the Department of Electrical Engineering at UC Riverside, where he is a Professor and Director of the Nano-Device Laboratory (NDL), which he organized in 2000. In 2005, during his sabbatical, he was Visiting Professor at the University of Cambridge, U.K. Prof. Balandin is a Founding Chair of the Materials Science & Engineering (MS&E) program at UCR. His research interests are in the area of advanced materials, nanostructures and devices for electronics, optoelectronics and energy conversion. He conducts both experimental and theoretical research. He is known for contributions to the phonon engineering and graphene fields, exciton and phonon confinement effects, 1/f noise in electronic devices, physics and applications of quantum dots. Prof. Balandin is a recipient of IEEE Pioneer of Nanotechnology Award for 2011. He was recognized by the ONR Young Investigator Award, NSF CAREER Award, UC Regents Award, and Merrill Lynch Innovation Award. He is a Fellow of several professional societies, including APS, OSA, SPIE, IOP and AAAS. He published over 180 journal papers, edited or authored 5 books and five-volume Handbook of Semiconductor Nanostructures and Nanodevices. His h-factor is above 41 and his papers were cited over 6,700 times (Web of Science). He has given ~80 plenary, keynote and invited talks at conferences and government organizations. Prof. Balandin serves as an Editor of IEEE Transactions on Nanotechnology. His research has been supported by NSF, ONR, AFOSR, ARO, NASA, DOE, SRC, DARPA, CRDF, UC MICRO, IBM, TRW, Intel and Raytheon at the level of ~$800,000 per year for the last 10 years. More info about his research can be found at http://ndl.ee.ucr.edu/
