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Golnaz  Karbasian

Golnaz Karbasian


Phone: 574-631-1275

Office: B20 Stinson Remick


University of Notre Dame, Doctor of Philosophy (Ph.D), Electrical and Electronics Engineering, expected graduation date: December 2015

University of Notre Dame, Master of Science (MSc), Electrical and Electronics Engineering, 2012

University of Tehran, Bachelor of Science (BS), Electrical and Electronics Engineering, 2010


Currently, I am a PhD candidate in electrical engineering at the University of Notre Dame under supervision of Professor Gregory Snider and Dr. Alexei Orlov. I graduated with my BSc in electrical engineering from the University of Tehran, Iran. 

Summary of Activities/Interests

I am interested in fabrication and characterization of single electron transistors (SETs). SETs are the most sensitive electrometers to date, suitable for detecting a fraction of a single electron charge. I use different nanofabrication techniques to make SETs with nanoscale MIM tunnel junctions. I am specially interested in atomic layer deposition, electron beam lithography, and chemical mechanical polishing to make the smallest features. My list of publications is as follows: 

  • Fabrication of Nanodamascene Metallic Single Electron Transistor
    Golnaz Karbasian, et al. Submitted to J. Vac. Sci. Technol. B 2015
  • High Aspect Ratio Features in Poly(methylglutarimide) Using Electron Beam Lithography and Solvent Developers  
    Golnaz Karbasian, et al. J. Vac. Sci. Technol. B 30, 06FI01 (2012).
  • Chemical Mechanical Planarization of Gold
    Golnaz Karbasian et al. J. Vac. Sci. Technol. A 32, 021402 (2014).
  • InGaN Channel High-Electron-Mobility Transistors with InGaN Barrier and ft/fmax Of 260/220 GHz
    Ronghua Wang, Guowang Li, Golnaz Karbasian, et al. Appl. Phys. Express 6, 016503 (2013)
  • Quaternary Barrier InGaAlN HEMTs With ft/fmax Of 230/300 GHz
    Ronghua Wang, Guowang Li, Golnaz Karbasian, et al. IEEE Elec. Dev. Lett., 34, issue 3, pp. 378 (2013)