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Golnaz  Karbasian

Golnaz Karbasian


Phone: 574-631-1275

Office: B20 Stinson Remick


University of Notre Dame, Doctor of Philosophy (Ph.D.), Electrical and Electronics Engineering

University of Notre Dame, Master of Science (M.Sc.), Electrical and Electronics Engineering, 2012

University of Tehran, Bachelor of Science (BS), Electrical and Electronics Engineering, 2010


I was born in the capital of Iran, Tehran, and spent my whole life in Iran before coming to the United States.I graduated from the University of Tehran, the oldest and most prestigious university in Iran, in 2010 with a bachelor's degree in electrical engineering. Since I was among the top students, I was granted the admission to get my masters without taking the entrance exam.However, to explore more, I left Iran with the hope of achieving a higher quality research experience.I entered the University of Notre Dame to pursue my studies in 2010.

Summary of Activities/Interests

My master's thesis topic is chemical mechanical polishing (CMP) of gold:

Gold, as a noble metal, has always been of great interest in nanotechnology due to its resistance to oxidation and corrosion. This characteristic however, makes gold patterning challenging. As my masters project, I focused on different additives, oxidizers and surfactants, to improve the outcome of Au CMP. Gold can be a desirable candidate for next generation interconnect technology.

My PhD project focuses on single electron transistor(SET) fabrication:

(SETs) are the most sensitive electrometers to date. Several methods have been used to fabricate Si based SETs, however, metal SETs have always been challenging due to constraints in lithography and sub nm dielectric deposition. In my project, electron beam lithography, chemical mechanical polishing,and atomic layer deposition are used to fabricate nano-damascene metal SETs

I also have thoroughly studied electron beam lithography, and have developed T-gate fabrication technology in U of Notre Dame for the first time.