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Sara Fathipour

Sara Fathipour

Email: sfathipo@nd.edu

Phone: 574-631-1103

Office: Stinson-Remick 228

Education

University of Notre Dame, Doctor of Philosophy (Ph.D), Electrical and Electronics Engineering, expected graduation date: December 2017.

University of Tehran, Bachelor of Science (BS), Electrical and Electronics Engineering, 2012.

Biography

Sara Fathipour received her B.Sc. degree in electrical engineering from University of Tehran, Iran in 2012. She is now a PhD student in the department of electrical engineering at the University of Notre Dame under supervision of Professor Seabaugh.

 

Summary of Activities/Interests

2-D materials (MoS2, WSe2, MoTe2…), CNT and TMD nanotubes, tunneling transistors, memory, nanoelectronics, energy harvesting, optoelectronics, semiconductor devices (fabrication and characterization).

PEER REVIEWED JOURNAL PAPERS 

[1]         R. Yan, S. Fathipour, Y. Han, B. Song, S. Xiao, M. Li, N. Ma, V. Protasenk, D. Muller, D. Jena, and H. G. Xing, “Esaki diodes in van der Waals heterojunctions with broken energy band alignment,” Nano Letters (2015).

[2]         H. Xu, S. Fathipour, E. Kinder, A. Seabaugh, S. Fullerton- Shirey, “Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using PEO:CsClO4 Solid Polymer Electrolyte,” ACS Nano,  Volume 9, 4900 (2015).

[3]         S. Fathipour, M. Remskar, A. Varlec, A. Ajoy, R. Yan, S. Vishwanath, S. Rouvimov, W. S. Hwang, H. G. Xing, D. Jena and A. Seabaugh, “Synthesized multiwall MoS2 nanotube and nanoribbon field effect transistors,” APL, Volume 106, 022114 (2015).

[4]         S. Fathipour, N. Ma, W. S. Hwang, V. Protasenko, S. Vishwanath, H. Xing, H. Xu, D. Jena, J. Appenzeller, and A. Seabaugh, “Exfoliated multilayer MoTe2 field effect transistors,” APL, Volume 105, 192101 (2014).

[5]         V. Fathipour, S. Fathipour, M. Fathipour and M. A. Malakootian, “Device Simulation of a Novel Strained Silicon Channel RF LDMOS,” Microelectronic Engineering – Elsevier, Volume 94, 29 (2012).

CONFERENCE PROCEEDING, PRESENTATIONS AND OTHER PUBLICATIONS 

[1]         S. Fathipour, H. Li, M. Remškar, L. Yeh, W. Tsai, E. Chen, Y. Lin, S. Fullerton-Shirey, and A. Seabaugh, “Record high current density and low contact resistance in MoS2 FETs by ion doping”, VLSI-TSA, Hsinchu, Taiwan, 2016.

[2]         A. Seabaugh, S. Fathipour, W. Li, H. Lu, J. H. Park, A. Kummel, D. Jena, S. Fullerton-Shirey, and P. Fay, “Steep subthreshold swing tunnel FETs: GaN/InN/GaN and transition metal dichalcogenide channels”, Electron Devices Meeting (IEDM), DC, USA, 2015.

[3]         S. Fathipour, J. H. Park, A. Kummel, and A. Seabaugh, “Low-leakage WSe2 FET gate-stack using titanyl phthalocyanine seeding layer for atomic layer deposition of Al2O3,” Device Research Conference (DRC), Ohio, USA, 2015.

 [4]         J. H. Park, S. Fathipour, I. Kwak, H. C. Prakash, S. Vishwanath, H. Xing, S. Banerjee, S. Fullerton-Shirey, A. C. Seabaugh, and A. C. Kummel, “Titanyl Phthalocyanine Seeding layer for Deposition of High Nucleation Density Dielectric on WSe2”, TECHCON, 2015.

 [5]         R. Yan, S. Xiao, S. Fathipour, B. Song, M. Li, N. Ma, V. Protasenk, D. Jena, and H. G. Xing, “Esaki diodes in van der Waals vertical heterojunctions with broken energy band alignment,” Electronic Materials Conference (EMC), Ohio, USA, 2015.

 [6]         S. Fathipour, H. Xu, E. Kinder, S. Fullerton-Shirey and A. Seabaugh, “Investigation of aging and restoration of polyethylene-oxide cesium perchlorate solid polymer electrolyte used for ion doping of a WSe2 field-effect transistor,” Device Research Conference (DRC), Santa Barbara, CA, USA, 2014.

 [7]         W. S. Hwang, S. Fathipour, A. Seabaugh, H. Xing, S. Fullerton-Shirey, D. Jena, “Two- Dimensional Crystal Semiconductors for Beyond Si Technology,” Collaborative Conference on Materials Research (CCMR), Incheon/Seoul, South Korea, June 23-27, 2014.

 [8]         A. Seabaugh, H. Lu, N. Ma, S. Fathipour, S. E. Kinder, S. Sabnis, H. Xu, M. Asghari Heidarlou, W. S. Hwang, S. Fullerton-Shirey, D. Jena, “Materials Challenges for Steep Subthreshold- Swing Transistors,” Collaborative Conference on Materials Research (CCMR), Incheon/Seoul, South Korea, June 23-27, 2014.

 [9]         H. Xu, E. Kinder, S. Fathipour, A. Seabaugh and S. Fullerton-Shirey, “Reconfigurable ion doping in 2H-MoTe2 field-effect transistors using PEO: CsClO4 electrolyte,” ISCS, Montpellier, France, 2014.

[10]         M. tabatabaei, K. Khaliji, M.Fathipour, Y. Abdi, and S. Fathipour, “A Computational Study on Ballistic Electronic Transport in Group-IV Armchair Nanoribbon Based Field Effect Transistors,” ISDRS, December 11-13, 2013.

[11]         A. Seabaugh, S. Fathipour, H. Xu, N. Ma, E. Kinder, S. Sabnis, S. Fullerton, H. Xing, and D. Jena,“Tunnel FETs based on 2D crystals,” SEMATECH Beyond CMOS Workshop, Washington, DC, December 8, 2013.

[12]         S. Fathipour, W. S. Hwang, T. H. Kosel, H. Xing, W. Haensch, D. Jena and A. C. Seabaugh, “Exfoliated MoTe2 field-effect transistor,” Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 June, 2013.

[13]         V. Fathipour, A. Mojab, M. A. Malakoutian, S. Fathipour and M. Fathipour, “The Impact of Process Parameter Variations on the Electrical Characteristics of a RESURF LDMOS and its Compact Modeling,” ISDRS, College Park, MD, USA, December 7-9, 2011(extended abstract). 

[14]         V. Fathipour, M. A. Malakoutian, S. Fathipour and M. Fathipour, “Analysis of a Source Hetrojunction LDMOS Device with Strained Silicon Channel,” ICEE, Tehran, Iran, May 17-19, 2011.  

[15]         V. Fathipour, M. A. Malakootian, S. Fathipour and M. Fathipour, “Analysis of a Novel Strained Silicon RF LDMOS,” WASET/ ICECECE, Amsterdam, Netherlands, September 2010.      

[16]         V. Fathipour, M. A. Malakoutian, S. Fathipour, M. Fathipour, “Design and Analysis of a Novel Strained Silicon Channel RF LDMOS,” IUMRS-ICEM, Kintex, Korea, August 22-27, 2010.

News

NDIIF Announces Two Awards — Best Imaging Publications for 2015

May 5, 2016

The Notre Dame Integrated Imaging Facility has announced two awards for the best imaging publications for calendar year 2015 - April 15, 2016.

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